Microscopic properties of the SiO2/Si interface growth based on numerical simulations
Document title: Microscopic properties of the SiO2/Si interface growth based on numerical simulations
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000132017
ISSN: 0103-9733
Authors: 1
Institutions: 1Universidade Federal de Pernambuco, Departamento de Física, Recife, Pernambuco. Brasil
Year:
Season: Jun
Volumen: 27
Number: 2
Pages: 325-333
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Química,
Física y astronomía,
Matemáticas
Keyword: Fisicoquímica y química teórica,
Física de materia condensada,
Matemáticas aplicadas,
Oxidación,
Silicio,
Películas delgadas,
Simulación numérica,
Interfaces
Keyword: Chemistry,
Physics and astronomy,
Mathematics,
Physical and theoretical chemistry,
Condensed matter physics,
Applied mathematics,
Oxidation,
Silicon,
Thin films,
Numerical simulation,
Interface
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