Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength



Título del documento: Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000309112
ISSN: 0103-9733
Autores: 1


Instituciones: 1Telecomunicacoes Brasileiras S.A, Centro de Pesquisa e Desenvolvimento, Campinas, Sao Paulo. Brasil
Año:
Periodo: Dic
Volumen: 27
Número: 4
Paginación: 456-463
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Experimental, aplicado
Resumen en inglés We present measurements of the differential gain of multiquantum well (MQW) broad area lasers emitting at 1.55 mm wavelength, taking into account the nonuniform stimulated emission caused by filamentation within the optical cavity. The differential gain was determined from measurements of the threshold current density, considering the losses due to the inhomogenous carrier density distribution, as an apparent leakage current effect in the output power-current characteristics. The lasers were grown by low pressure MOCVD and incorporate an InGaAs/InGaAsP/InP separate confinement MQW active region. The results are compared with previous data reported on similar MQW heterostructures
Disciplinas: Ingeniería
Palabras clave: Ingeniería de telecomunicaciones,
Pozos cuánticos,
Láser,
Ganancia diferencial,
Longitud de onda
Keyword: Engineering,
Telecommunications engineering,
Quantum wells,
Laser,
Differential gain,
Wavelength
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