Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength



Document title: Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000309112
ISSN: 0103-9733
Authors: 1


Institutions: 1Telecomunicacoes Brasileiras S.A, Centro de Pesquisa e Desenvolvimento, Campinas, Sao Paulo. Brasil
Year:
Season: Dic
Volumen: 27
Number: 4
Pages: 456-463
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Experimental, aplicado
English abstract We present measurements of the differential gain of multiquantum well (MQW) broad area lasers emitting at 1.55 mm wavelength, taking into account the nonuniform stimulated emission caused by filamentation within the optical cavity. The differential gain was determined from measurements of the threshold current density, considering the losses due to the inhomogenous carrier density distribution, as an apparent leakage current effect in the output power-current characteristics. The lasers were grown by low pressure MOCVD and incorporate an InGaAs/InGaAsP/InP separate confinement MQW active region. The results are compared with previous data reported on similar MQW heterostructures
Disciplines: Ingeniería
Keyword: Ingeniería de telecomunicaciones,
Pozos cuánticos,
Láser,
Ganancia diferencial,
Longitud de onda
Keyword: Engineering,
Telecommunications engineering,
Quantum wells,
Laser,
Differential gain,
Wavelength
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