Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
Título del documento: Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000336872
ISSN: 0103-9733
Autores: 1
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1
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3
3
Instituciones: 1Universidade Estadual de Londrina, Departamento de Fisica, Londrina, Parana. Brasil
2Universidade Federal de Uberlandia, Instituto de Fisica, Uberlandia, Minas Gerais. Brasil
3Universidade de Sao Paulo, Instituto de Fisica, Sao Paulo. Brasil
Año:
Periodo: Mar
Volumen: 40
Número: 1
Paginación: 15-21
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico, teórico
Resumen en inglés In this work we report on a comparison of some theoretical models usually used to fit the dependence on temperature of the fundamental energy gap of semiconductor materials. We used in our investigations the theoretical models of Vi˜na, P¨assler-p and P¨assler-r to fit several sets of experimental data, available in the literature for the energy gap of GaAs in the temperature range from 12 to 974 K. Performing several fittings for different values of the upper limit of the analyzed temperature range (Tmax), we were able to follow in a systematic way the evolution of the fitting parameters up to the limit of high temperatures and make a comparison between the zero-point values obtained from the different models by extrapolating the linear dependence of the gaps at high T to T = 0 K and that determined by the dependence of the gap on isotope mass. Using experimental data measured by absorption spectroscopy, we observed the non-linear behavior of Eg(T) of GaAs for T > QD
Disciplinas: Física y astronomía
Palabras clave: Electromagnetismo,
Comportamiento no lineal,
Energía del punto cero,
Temperatura,
Dependencia,
Arseniuro de galio
Keyword: Physics and astronomy,
Electromagnetism,
Nonlinear behavior,
Zero-point energy,
Temperature,
Dependence,
Gallium arsenide
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