2d electron transport in selectively doped gaas / inxga1-xas multiple quantum well structures



Document title: 2d electron transport in selectively doped gaas / inxga1-xas multiple quantum well structures
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000017537
ISSN: 0103-9733
Authors: 1


Institutions: 1Moscow Lomonosov State Univ, Low Temperature Physics Dept, Moscú. Rusia
Year:
Season: Mar
Volumen: 26
Number: 1
Pages: 313-317
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Semiconductores,
Pozos cuánticos,
Fotoluminiscencia,
Magnetorresistencia,
Transporte de electrones
Keyword: Physics and astronomy,
Condensed matter physics,
Quantum wells,
Semiconductors,
Photoluminescence,
Magnetoresistance,
Electron transport
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