1/f noise in doped hydrogenated amorphous silicon
Document title: 1/f noise in doped hydrogenated amorphous silicon
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000001212
ISSN: 0103-9733
Authors: 1
Institutions: 1University of Minnesota, School Physics Astronomy, Minneapolis, Minnesota. Estados Unidos de América
Year:
Season: Jun
Volumen: 23
Number: 2
Pages: 137-143
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Ruido,
Conductancia,
Silicio amorfo,
Semiconductores,
Corriente eléctrica
Keyword: Physics and astronomy,
Condensed matter physics,
Noise,
Conductance,
Semiconductors,
Silicon-amorphous,
Electric current
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