An overview on parameter extraction in field effect transistors
Document title: An overview on parameter extraction in field effect transistors
Journal: Acta científica venezolana
Database: PERIÓDICA
System number: 000174335
ISSN: 0001-5504
Authors: 1
Institutions: 1Universidad Simón Bolívar, Departamento de Electrónica, Caracas, Distrito Federal. Venezuela
2University of Central Florida, Department of Electrical and Computer Engineering, Orlando, Florida. Estados Unidos de América
Year:
Volumen: 52
Number: 3
Pages: 176-187
Country: Venezuela
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Ingeniería
Keyword: Ingeniería electrónica,
MOSFET,
Extracción de parámetros,
Dispositivos semiconductores,
Modelos matemáticos,
Transistores
Keyword: Engineering,
Electronic engineering,
MOSFET,
Parameter extraction,
Semiconductor devices,
Mathematical models,
Transistors
Document request
Note: The document is shipping cost.









Original documents can be consulted at the Departamento de Información y Servicios Documentales, located in the Annex to the General Directorate of Libraries (DGB), circuito de la Investigación Científica across from the Auditorium Nabor Carrillo, located between the Institutes of Physics and Astronomy. Ciudad Universitaria UNAM. Show map
For more information: Departamento de Información y Servicios Documentales, Tels. (5255) 5622-3960, 5622-3964. E-mail: sinfo@dgb.unam.mx . Monday to Friday from (8 to 16 hrs).