| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000365823 |
| ISSN: | 1665-3521 |
| Autores: | Coyopol, A1 Díaz Becerril, T1 García Salgado, G1 Rosendo, E1 Juárez, H1 López, R1 De La Rosa, E1 Pacio, M1 Galeazzi, R1 |
| Instituciones: | 1Benemérita Universidad Autónoma de Puebla, Centro de Investigación en Dispositivos Semiconductores, Puebla. México |
| Año: | 2012 |
| Periodo: | Dic |
| Volumen: | 25 |
| Número: | 4 |
| Paginación: | 226-230 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | In this work, optical and morphological changes on hydrogen-annealed porous silicon layers (PSL) are reported. The PSL were annealed in a hot filament chemical vapor deposition (HFCVD) system at a temperature of 1000 °C. Annealing time, 10, 20, 60, 90, 180 and 360 sec was taken as parameter to changes the properties of PSL. After treatment, the samples were characterized by scanning electron microscopy (SEM), Fourier Transform infrared (FTIR) spectroscopy, reflectance and photoluminescence (PL) measurements. It was found that silicon matrix, in the PSL, was etched off by their interaction with atomic radicals causing changes in its morphology, porosity and thickness. The reflectance of the film, which is dependent on the porosity, also decreased to values near to 0% in the range of 400 to 850 nm even for short annealing times. The emission properties of the films, in the visible range, shifted to blue region for longer processing time |
| Disciplinas: | Ingeniería, Química |
| Palabras clave: | Ingeniería de materiales, Ingeniería química, Semiconductores, Silicio poroso, Recocido, Hidrógeno, Propiedades ópticas |
| Keyword: | Engineering, Chemistry, Chemical engineering, Materials engineering, Semiconductors, Porous silicon, Annealing, Hydrogen, Optical properties |
| Texto completo: | Texto completo (Ver HTML) |
