FTIR and photoluminescence of annealed silicon rich oxide films
Título del documento: FTIR and photoluminescence of annealed silicon rich oxide films
Revista: Superficies y vacío
Base de datos: PERIÓDICA
Número de sistema: 000373776
ISSN: 1665-3521
Autores: 1
1
2
2
3
Instituciones: 1Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias, Puebla. México
2Instituto Nacional de Astrofísica, Optica y Electrónica, Tonantzintla, Puebla. México
3Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México
Año:
Periodo: Mar
Volumen: 22
Número: 1
Paginación: 11-14
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Experimental, aplicado
Resumen en inglés In order to have optoelectronic function integrated in a single chip, it is very important to obtain a silicon compatible material with an optimal Photoluminescence (PL) response. The Silicon Rich Oxide (SRO) has shown intense PL and is also compatible with silicon technology. In this work, the composition and optical properties of the SRO films are studied using null Ellipsometry, Fourier Transformed Infrared spectroscopy (FTIR), and Photoluminescence (PL). The SRO films were annealed at high temperature during different times. The IR absorption spectra show the presence of three characteristics Si-O-Si vibrations modes in SiO2. However, changes in their intensity and position were observed when annealing time and silicon excess were varied. These changes are directly related with structural variation in the SRO films. PL spectra show a considerable emission in the range 650 to 850 nm that varies with different thermal treatment times
Disciplinas: Ingeniería,
Física y astronomía
Palabras clave: Optica,
Nanopartículas,
Oxido de silicio,
Fotoluminiscencia,
Indice de refracción,
Chips,
Recocido
Keyword: Engineering,
Physics and astronomy,
Optics,
Nanoparticles,
Silicon oxide,
Photoluminescence,
Refractive index,
Annealing,
Chips
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