| Revue: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000447131 |
| ISSN: | 0035-001X |
| Autores: | Rodrigues, C. Goncalves1 Luzzi, R2 |
| Instituciones: | 1Pontificia Universidade Catolica de Goias, Escola de Ciencias Exatas e Computacao, Goiania, Goias. Brasil 2Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin", Campinas, Sao Paulo. Brasil |
| Año: | 2021 |
| Periodo: | Mar-Abr |
| Volumen: | 67 |
| Número: | 2 |
| Paginación: | 318-323 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | Aluminum nitride is attracting great interest of the industry and scientific community due to its interesting properties. In this paper is performed a theoretical study on the ultrafast transient transport properties of photoinjected carriers in wurtzite AlN subjected to electric fields up to 80 kV/cm. For this, the Nonequilibrium Statistical Operator Method was used. The evolution towards the steady state of drift velocity of carriers (electrons and holes) and nonequilibrium temperature (carriers and phonons) subpicosecond scale were determined |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Nitruro de aluminio, Plasma semic, Semiconductor de plasma, Semiconductor fotoinyectado |
| Keyword: | Condensed matter physics, Aluminium nitride, Plasma semiconductor, Photoinjected semiconductor |
| Texte intégral: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
