Solutions of q-deformed multiple-trapping model for charge carrier transport from time-of-flight transient photo-current in amorphous semiconductors
Título del documento: Solutions of q-deformed multiple-trapping model for charge carrier transport from time-of-flight transient photo-current in amorphous semiconductors
Revue: Revista mexicana de física
Base de datos: PERIÓDICA
Número de sistema: 000453976
ISSN: 0035-001X
Autores: 1
1
1
1
Instituciones: 1Echahid Cheikh Larbi Tebessi university, Laboratoire de Physique Appliquee et Theorique, Tébessa. Argelia
Año:
Periodo: Sep-Oct
Volumen: 66
Número: 5
Paginación: 643-655
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico, teórico
Resumen en inglés The aim of this paper is to investigate the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. We first modify the multiple-trapping model of charge carriers in amorphous semiconductors from time-of-flight transient photo-current in the framework of the q-derivative formalism, and then we construct our simulated current by using an approach based on the Laplace method. It is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion. Furthermore, we study the influence of the parameter q of the q-calculus formalism on the drift mobility
Disciplinas: Física y astronomía
Palabras clave: Física,
Semiconductores amorfos,
Modelo de trampeo múltiple,
Movilidad a la deriva,
Técnica de Laplace,
Tiempo de vuelo
Keyword: Physics,
Amorphous semiconductors,
Multiple-trapping model,
Drift mobility,
Laplace technics,
Time-of-flight
Texte intégral: Texto completo (Ver HTML) Texto completo (Ver PDF)