| Revue: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000425501 |
| ISSN: | 0035-001X |
| Autores: | Mendoza Alvarez, A1 Diago Cisneros, L1 Flores Godoy, J.J3 Fernández Anaya, G1 |
| Instituciones: | 1Universidad Iberoamericana, Departamento de Física y Matemáticas, Ciudad de México. México 2Universidad de La Habana, Facultad de Física, La Habana. Cuba 3Universidad Católica del Uruguay, Facultad de Ingeniería y Tecnologías, Montevideo. Uruguay |
| Año: | 2016 |
| Periodo: | Oct |
| Volumen: | 62 |
| Número: | 5 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | The effective potential (Veff) evolution, is graphically illustrated for an increasing mixing of heavy- and light-holes (lh) under strain. The impact of the present study is enlarged provided we were able to deduce comprehensive analytic expressions for the valence-band offset both for zinc blende and wurtzite semiconductors, useful in current solid-state physics studies, whenever one manages to manipulate the accumulated pseudomorphic strain and mixing effects in a single shoot. We found permutations of Veff character for lh, that retrieve the hypothetically predicted striking “keyboard” effect. Interestingly, the strain diminishes the keyboard profile, and also makes it emerge or vanish occasionally. Due in-plane anisotropy the keyboard effect under pseudomorphic stress turns topologically tuned. We conclude that multiband-mixing and stress-induced events, are strong competitor mechanisms that can not be universally neglected by assuming a fixed-height Veff, as a reliable none-mutable test-run input for layered systems. Our results may be of relevance for promising tunable heterostructure’s design to enhance the hole mobility in semiconductor devices |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física, Potencial de dispersión eficaz, Mezcla de bandas, Cepa seudomorfa |
| Keyword: | Physics, Effective scattering potential, Band mixing, Pseudomorphic strain |
| Texte intégral: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
