Origin of dielectric relaxations in polycrystalline RbHSeO4 above room temperature



Título del documento: Origin of dielectric relaxations in polycrystalline RbHSeO4 above room temperature
Revue: Revista mexicana de física
Base de datos: PERIÓDICA
Número de sistema: 000368118
ISSN: 0035-001X
Autores: 1
2
2
Instituciones: 1Universidad Nacional de Colombia, Departamento de Ciencias Básicas, Palmira, Valle del Cauca. Colombia
2Universidad del Valle, Departamento de Física, Cali, Valle del Cauca. Colombia
Año:
Periodo: Nov-Dic
Volumen: 59
Número: 6
Paginación: 540-544
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico, teórico
Resumen en inglés In the present paper, the dielectric relaxation properties of RbHSeO4 have been studied by means of impedance spectroscopy measurements over wide ranges of frequencies at several isotherms (T<415 K). The frequency dependence of the permittivity data reveal a distinct dielectric relaxation at low frequency, which is about 385 Hz at 310 K, then it shifts to higher frequencies (~40 kHz) as the temperature increases. The ƒmax vs. reciprocal T shows an activated relaxation process with an activation energy of 0.9 eV, which is in close agreement with that associated with transport of charge carriers. We suggest that the observed dielectric relaxation could be attributed to polarization induced by the proton jump and selenate tetrahedral reorientations. The displacement of mobile H+ proton accompanied by SeO‾42 tetrahedra reorientations create structural distortion in both sublattices which induce localized dipoles like HSeO‾4
Disciplinas: Física y astronomía
Palabras clave: Física de materia condensada,
Conductividad iónica,
Relajación dieléctrica,
Materiales policristalinos
Keyword: Physics and astronomy,
Condensed matter physics,
Ionic conductivity,
Dielectric relaxation,
Polycrystaline materials
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