| Revue: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000404277 |
| ISSN: | 0035-001X |
| Autores: | Domínguez, M.A1 Rosales, P2 Torres, A2 Flores, F1 Luna, J.A1 Alcántara, S1 Moreno, M2 |
| Instituciones: | 1Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias, Puebla. México 2Instituto Nacional de Astrofísica, Optica y Electrónica, Tonantzintla, Puebla. México |
| Año: | 2016 |
| Periodo: | May-Jun |
| Volumen: | 62 |
| Número: | 3 |
| Paginación: | 223-228 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | In this work, the fabrication of bottom-gate TFTs with unplanarized and planarized gate electrode are reported, as well simulations of the impact of the gate planarization in the TFTs are presented. Previously in literature, a reduction of the contact resistance has been attributed to this planarized structure. In order to provide a physical explanation of this improvement, the electrical performance of ambipolar a-SiGe:H TFTs with planarized gate electrode by Spin-On Glass is compared with unplanarized ambipolar a-SiGe:H TFTs. Then, the properties in the main device interfaces are analyzed by physically-based simulations. The planarized TFTs have better characteristics such as field-effect mobility, on-current, threshold voltage and on/off-current ratio which are consequence of the improved contact resistance |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física, Transistores de película delgada, Silicio amorfo hidrogenado, Simulación, Planaridad |
| Keyword: | Physics and astronomy, Physics, Thin-film transistors, Hydrogenated amorphous silicon, Simulation, Planarity |
| Texte intégral: | Texto completo (Ver PDF) |
