| Revue: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000438991 |
| ISSN: | 0035-001X |
| Autores: | Oketch, F1 Oyoko, H1 |
| Instituciones: | 1Pwani University, Department of Physics, Kilifi. Kenia 2Technical University of Mombasa, Department of Mathematics and Physics, Mombasa. Kenia |
| Año: | 2020 |
| Periodo: | Ene-Feb |
| Volumen: | 66 |
| Número: | 1 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | In this work, we have used a variational technique within the effective mass approximation to study the variation of the photoionization cross section of a donor impurity in a cylindrical GaAs quantum dot with incident photon frequencies and applied uniaxial stress. We have used the dipole approximation and assumed that the barrier potential is infinite. Our results show that the photoionization cross section begins at a finite value and increases with increasing frequency until it reaches a peak and then it decreases gradually, almost exponentially, until it reaches a finite value when it is almost insensitive to any further increase in frequency. Furthermore, for a particular quantum dot length, the photoionization cross section decreases with increasing applied uniaxial stress. We have also noted that the longer the quantum well dot, the larger is the photoionization cross section |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Electromagnetismo, Punto cuántico AlGaAs, Sección transversal de fotoionización, Impureza del donante hidrogénico, Impureza donante no hidrógena, Estrés uniaxial |
| Keyword: | Electromagnetism, GaAs quantum dot, Photoionization cross section, Hydrogenic donor impurity, Non hydrogenic donor impurity, Uniaxial stress |
| Texte intégral: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
