| Revue: | Quimica nova |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000313403 |
| ISSN: | 0100-4042 |
| Autores: | Rabelo, Adriano César1 Arantes, Tatiane Moraes Bottecchia, Otavio Luiz |
| Instituciones: | 1Universidade Federal de Uberlandia, Instituto de Quimica, Uberlandia, Minas Gerais. Brasil |
| Año: | 2007 |
| Periodo: | Abr |
| Volumen: | 30 |
| Número: | 2 |
| Paginación: | 287-291 |
| País: | Brasil |
| Idioma: | Portugués |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | Copper selenide (berzelianite) films were prepared on the title substrates using the chemical bath deposition technique (CBD). Film composition was determined by energy dispersion of x-rays. The kinetics of film growth is parabolic and film adherence limits the film thickness. On titanium, copper selenide forms islands that do not completely cover the surface, unless the substrate is prepared with a tin oxide layer; film composition also depends on the titanium oxide layer. On vitreous carbon, CBD and mechanical immobilization techniques lead to films with similar resistances for the electron transfer across the film/substrate interface. On gold, composition studies revealed that film composition is always the same if the pH is in the range from 8 to 12, in contrast to films prepared by an ion-ion combination route. On copper, a new procedure for obtaining copper selenide films as thick as 5 µm has been developed |
| Disciplinas: | Química, Ingeniería |
| Palabras clave: | Ingeniería de materiales, Ingeniería química, Selenuro de cobre, Películas delgadas, Semiconductores |
| Keyword: | Chemistry, Engineering, Chemical engineering, Materials engineering, Copper selenide, Thin films, Semiconductors |
| Texte intégral: | Texto completo (Ver HTML) |
