| Revista: | Journal of applied research and technology |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000394040 |
| ISSN: | 1665-6423 |
| Autores: | Chen, Chao-Nan1 Huang, Jung-Jie2 |
| Instituciones: | 1Asia University, Department of Computer Science and Information Engineering, Taichung. Taiwán 2DaYeh University, Department of Industrial Engineering and Managemet, Changhua. Taiwán |
| Año: | 2015 |
| Periodo: | Abr |
| Volumen: | 13 |
| Número: | 2 |
| Paginación: | 170-176 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Aplicado, descriptivo |
| Resumen en inglés | A Solution Based Indium-Zinc-Oxide thin-film transistor (TFT) with a field-effect mobility of 0.58 cm2/Vs, a threshold voltage of 2.84 V by using pulse laser annealing processes. Indium-zinc-oxide (IZO) films with a low process temperature were deposited by sol-gel solution based method and KrF excimer laser annealing (wavelength of 248 nm). Solution based indium-zinc-oxide (IZO) films usually needs high temperature about 500°C post annealing in a oven. KrF excimer laser annealing shows advantages of low temperature process, the less process time deceases to only few seconds was used to replace the high temperature process. IZO thin films suffering laser irradiation still keeps the amorphous film quality by transmission electron microscopy (TEM) diffraction pattern analysis. It could be expected this technology to large-area flexible display, in the future |
| Disciplinas: | Ciencias de la computación, Ingeniería |
| Palabras clave: | Ingeniería electrónica, Transistores de película delgada, Recocido láser, Indio-óxido de zinc |
| Keyword: | Computer science, Engineering, Electronic engineering, Thin-film transistors, Laser annealing, Indium-zinc oxide |
| Texto completo: | Texto completo (Ver HTML) |
