| Revue: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000403302 |
| ISSN: | 0103-9733 |
| Autores: | Arabshahi, H1 Khalvati, M.R2 Rokn-Abadi, M. Rezaee1 |
| Instituciones: | 1Ferdowsi University of Mashhad, Department of Physics, Mashhad. Irán 2Hakim Sabzevari University, Sabzevar. Irán |
| Año: | 2008 |
| Periodo: | Sep |
| Volumen: | 38 |
| Número: | 3A |
| Paginación: | 293-296 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation. Electronic states within the conduction band valleys at the Γ, L and X are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in InAs and AlAs is less sensitive to temperature than in other III-V semiconductors like GaAs and AlGaAs. So InAs and AlAs devices are expected be more tolerant to self-heating and high ambient temperature device modeling. Our steady-state velocity-field characteristics are in fair agreement with other recent calculations |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Estado sólido, Movilidad de electrones, Semiconductores |
| Keyword: | Physics and astronomy, Condensed matter physics, Solid state, Electron mobility, Semiconductors |
| Texte intégral: | Texto completo (Ver PDF) |
