| Revue: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159244 |
| ISSN: | 0103-9733 |
| Autores: | Beloto, A.F1 Abramof, E Ueda, M Berni, L.A Gomes, G.F |
| Instituciones: | 1Instituto Nacional de Pesquisas Espaciais, Laboratorio Associado de Sensores e Materiais, Sao Jose dos Campos, Sao Paulo. Brasil 2Laboratorio Nacional de Pesquisas Espaciais, Laboratorio Associado de Plasma, Sao Jose dos Campos, Sao Paulo. Brasil |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 768-770 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | In the present study we use x-ray diffraction methods to characterize the surface of Si wafers irradiated with nitrogen by Plasma Immersion Ion Implantation. This is a non-line-of-sight ion implantation method, which allows three-dimensional treatment of materials including semiconductors, metals and dielectrics. The atomic concentration profiles in the implanted Si wafers were measured by Auger electron spectroscopy. The (004) Si rocking curve ( w-scan) was measured in a high resolution x-ray diffractometer equipped with a Ge (220) four-crystal monochromator before and after implantation. A distortion of the Si (004)-rocking curve was clearly observed for the as-implanted sample. This rocking curve was successfully simulated by dynamical theory of x-ray diffraction, assuming a Gaussian strain profile through the implanted region. The analysis made by x-ray difraction and Auger electron spectroscopy revealed successful implantation of ions with ac- cumulated nitrogen dose of 1.5 x 1017 cm-3 .The Si wafers can be used as high sensitivity monitors in the Plasma Immersion Ion Implantation process, especially at the low dose range |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Semiconductores, Rayos X, Difracción, Silicio, Nitrógeno, Plasmas |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, X-rays, Diffraction, Silicon, Nitrogen, Plasmas |
| Texte intégral: | Texto completo (Ver HTML) |
