| Revue: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000310518 |
| ISSN: | 0103-9733 |
| Autores: | Rico, L1 Gómez, B. J Stachiotti, M Pellegri, N Feugeas, J. N Sanctis, O. de |
| Instituciones: | 1Universidad Nacional de Rosario, Instituto de Física, Rosario, Santa Fe. Argentina |
| Año: | 2006 |
| Periodo: | Sep |
| Volumen: | 36 |
| Número: | 3B |
| Paginación: | 1009-1012 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Nota breve o noticia |
| Enfoque: | Experimental |
| Resumen en inglés | Strontium Bismuth Tantalate (SBT) ferroelectric thin films have attracted considerable attention for the development of non-volatile ferroelectric random access memories (NV-FRAMs). These films, however, have a critical problem: a high processing temperature ( > 700ºC) is required for the crystallization of the perovskite phase. The thermal evolution of the SBT films prepared by Chemical Solution Deposition (CSD) techniques showed the formation of an intermediate oxygen-deficient fluorite phase at ~ 550ºC. The SBT perovskite phase crystallizes at higher temperatures. To favor an earlier perovskite crystallization, SBT thin films were implanted with oxygen ions pulses produced by a Plasma Focus (1 kJ). The samples were annealed at different temperatures in oxygen atmosphere and characterized by GI-XRD and Atomic Force Microscopy techniques. It was found that oxygen addition into the SBT structure promotes a better crystallization of the perovskite phase |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería de materiales, Ferroeléctricos, Películas delgadas, Implantación de oxígeno, Tantalato de estroncio bismuto |
| Keyword: | Engineering, Materials engineering, Ferroelectrics, Thin films, Oxygen implantation, Strontium bismuth tantalate |
| Texte intégral: | Texto completo (Ver HTML) |
