New physical interpretation of thermoelectric cooling in semiconductor structures



Título del documento: New physical interpretation of thermoelectric cooling in semiconductor structures
Revue: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000310476
ISSN: 0103-9733
Autores: 1
2
Instituciones: 1Instituto Politécnico Nacional, Escuela Superior de Ingeniería Mecánica y Eléctrica, México, Distrito Federal. México
2Universidad de Salamanca, Departamento de Física Aplicada y Electrónica, Salamanca. España
Año:
Periodo: Sep
Volumen: 36
Número: 3B
Paginación: 952-955
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico, teórico
Resumen en inglés Nontraditional approach to explain the thermoelectric cooling is suggested . It is based on the Le Chatelier-Braun thermodynamic principle. New effect of cooling and heating of junction of two materials (barrierless thermoelectric cooling) is theoretically predicted, and this effect is different from the Peltier effect (barrier thermoelectric cooling). The suggested thermoelectric effect must be displayed always at the finite values of the junction surface heat conductivity eta. Barrierless thermoelectric effect occurs even in the case when the conducting materials are identical with the same Peltier coefficients. It is shown that both barrier and barrierless thermoelectric cooling effects always exist simultaneously in the general case. The reasons proving reversibility of the thermoelectric cooling process are resulted
Disciplinas: Física y astronomía
Palabras clave: Termodinámica y física estadística,
Termoelectricidad,
Enfriamiento termoeléctrico
Keyword: Physics and astronomy,
Thermodynamics and statistical physics,
Thermoelectricity,
Thermoelectric cooling
Texte intégral: Texto completo (Ver HTML)