Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s



Título del documento: Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000382319
ISSN: 0103-9733
Autores: 1
Instituciones: 1Fayoum University, Faculty of Science, Fayoum. Egipto
Año:
Periodo: Jun
Volumen: 45
Número: 3
Paginación: 288-295
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Experimental
Resumen en inglés The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach–Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor (Q-factor) on signals and QDs-SOAs’ parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼1 Tb/s
Disciplinas: Física y astronomía,
Ciencias de la computación
Palabras clave: Física de materia condensada,
Hardware,
Puertas lógicas digitales,
Puerta XNOR,
Semiconductores de puntos cuánticos,
Amplificadores ópticos,
Emisión espontánea amplificada
Keyword: Physics and astronomy,
Computer science,
Condensed matter physics,
Hardware,
Digital logic gates,
XNOR gate,
Quantum dot semiconductors,
Optical amplifiers,
Amplified spontaneous emission
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