Electron G-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields



Título del documento: Electron G-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields
Revue: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000310485
ISSN: 0103-9733
Autores: 1
2
3
4
Instituciones: 1Universidad de La Habana, Departamento de Física Teórica, La Habana. Cuba
2Universidad del Valle, Departamento de Física, Cali, Valle del Cauca. Colombia
3Universidade Federal do Rio de Janeiro, Instituto de Fisica, Rio de Janeiro. Brasil
4Universidade Estadual de Campinas, Instituto de Fisica, Campinas, Sao Paulo. Brasil
Año:
Periodo: Sep
Volumen: 36
Número: 3B
Paginación: 854-857
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Experimental, aplicado
Resumen en inglés The Ogg-McCombe effective Hamiltonian for the electron in the conduction band together with the non-parabolic and effective-mass approximations were used in a theoretical study of the cyclotron effective mass and electron effective Landé g||-factor in semiconductor GaAs-Ga1-xAl xAs quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. Calculations are performed as a function of the applied magnetic field, and for different widths of the GaAs-Ga1-xAl xAs quantum wells. Results for the electron cyclotron effective mass and g||-factor are found in quite good agreement with experimental data
Disciplinas: Física y astronomía
Palabras clave: Física de partículas y campos cuánticos,
Factor G,
Ciclotrón,
Pozos cuánticos,
Campo magnético
Keyword: Physics and astronomy,
Particle physics and quantum fields,
G factor,
Cyclotron,
Quantum wells,
Magnetic field
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