Effective Area Effects on the Final Device Sensitivity of Ion Sensor Transducers



Título del documento: Effective Area Effects on the Final Device Sensitivity of Ion Sensor Transducers
Revue: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000388328
ISSN: 0103-9733
Autores: 1
1
Instituciones: 1Universidade de Sao Paulo, Ribeirao Preto, Sao Paulo. Brasil
Año:
Periodo: Ago
Volumen: 45
Número: 4
Paginación: 387-393
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Experimental, analítico
Resumen en inglés Fluorine-doped tin oxide (SnO2:F) was used as the ion-sensing layer of an EGFET-pH sensor. The effective area affects the final results, as well as the sensor surface potential and sensitivity. The sensor miniaturization is highly required on medical applications, with that the effective area must be properly understood. Routine insertion and removal of total and partial surface areas in buffer solution were analyzed and compared. The results show that the routine changes considerable the sensor sensitivity. Variations in the double layer, Helmholtz plane, and Gouy-Chapman region play a significant role. The final sensitivities of the samples were compared with values available in the literature, even for other materials. The role that area normalization plays in quality assessment is discussed for proper future technological miniaturizations
Disciplinas: Física y astronomía
Palabras clave: Física de materia condensada,
Oxido de estaño,
Dopaje con flúor,
Transductores,
Sensores iónicos,
pH
Keyword: Physics and astronomy,
Condensed matter physics,
Tin oxide,
Fluorine doping,
Transducers,
Ion sensors,
pH
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