Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots



Título del documento: Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots
Revue: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000310468
ISSN: 0103-9733
Autores: 1

Instituciones: 1Pontificia Universidade Catolica do Rio de Janeiro, Departamento de Fisica, Rio de Janeiro. Brasil
Año:
Periodo: Sep
Volumen: 36
Número: 3B
Paginación: 922-924
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Experimental, analítico
Resumen en inglés The conductance of two interacting dots connected to leads is studied. The configuration is such that one dot is embedded into the leads while the other is tunneling-coupled only to the first dot. The effect of the tunneling interaction strength on the conductance is discussed. As the two dot levels cross the Fermi level the low temperature conductance of the system cancels out, due to interference effects. This cancellation persists over a range of gate potential that depends upon the interaction strength: the greater the interaction the larger the range of gate potential where the current vanishes
Disciplinas: Física y astronomía
Palabras clave: Física de materia condensada,
Conductancia,
Efecto Kondo,
Puntos cuánticos
Keyword: Physics and astronomy,
Condensed matter physics,
Conductance,
Kondo effect,
Quantum dots
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