| Revue: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000403119 |
| ISSN: | 0103-9733 |
| Autores: | Enders, B.G1 Lima, F.M.S1 Fonseca, A.L.A1 Nunes, O.A.C1 Silva-Junior, E.F. da2 |
| Instituciones: | 1Universidade de Brasilia, Instituto de Fisica, Brasilia, Distrito Federal. Brasil 2Universidade Federal de Pernambuco, Departamento de Fisica, Recife, Pernambuco. Brasil |
| Año: | 2009 |
| Periodo: | Abr |
| Volumen: | 39 |
| Número: | 1A |
| Paginación: | 252-255 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | The results of an accurate theoretical study on the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum wells at low temperatures are presented. We solve coupled Schrodinger and Poisson equations self-consistently via the finite ¨ difference method. By employing a proper discretization on a nonuniform grid and taking into account the strong piezoelectric and spontaneous polarization fields exhibited by the wurtzite III-nitride heterostructures, a substantial increase in the 2DEG density is predicted with the increase of the donor diffusion length and the reduction of the spacer thickness |
| Disciplinas: | Física y astronomía, Ingeniería |
| Palabras clave: | Física de materia condensada, Ingeniería electrónica, Microelectrónica, Pozos cuánticos |
| Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Electronic engineering, Microelectronics, Quantum wells |
| Texte intégral: | Texto completo (Ver PDF) |
