| Revue: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159049 |
| ISSN: | 0103-9733 |
| Autores: | Monte, A.F.G1 Silva, S.W. da Cruz, J.M.R Morais, P.C Cox, H.M |
| Instituciones: | 1Universidade de Brasilia, Instituto de Física, Brasilia, Distrito Federal. Brasil 2Lucent Technologies, Murray Hill, New Jersey. Estados Unidos de América |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 690-693 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | The microluminescence surface scan technique (MSST) has been used to investigate photocarrier diffusion in undoped In0.53Ga0.47 As - InP single quantum well (QW), in the temperature (T) range from 15 K to 295 K. Narrowing of the photoluminescence (PL) spatial profile is observed as the temperature is lowered, indicating reduction of the photocarrier diffusion length upon cooling. It was found that the width of the PL spatial profile follows a linear function of temperature, but a change in slope by a factor of 2.6 is observed at about 200 K, indicating a change of the dominant carrier scattering mechanism. In the temperature range of 15 K to 200 K, the ambipolar photocarrier diffusion mechanism seems to be correlated to impurity states thermally activated |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Optica, Semiconductores, Difusión de fotoportadores, Pozos cuánticos, Microluminiscencia, Heteroestructuras |
| Keyword: | Physics and astronomy, Condensed matter physics, Optics, Semiconductors, Photocarrier diffusion, Quantum wells, Microluminescence, Heterostructures |
| Texte intégral: | Texto completo (Ver HTML) |
