Thomas-Fermi approximation in two p-type delta-doped quantum wells in GaAs and Si
Document title: Thomas-Fermi approximation in two p-type delta-doped quantum wells in GaAs and Si
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000174509
ISSN: 0035-001X
Authors: 1
Institutions: 1Universidad Autónoma de Zacatecas, Escuela de Física, Zacatecas. México
2Universidad de La Habana, Facultad de Física, La Habana. Cuba
Year:
Season: Abr
Volumen: 47
Number: 2
Pages: 153-157
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física,
Física de materia condensada,
Pozos cuánticos,
Aproximación Thomas-Fermi,
Niveles de energía,
Silicio,
Impurezas
Keyword: Physics and astronomy,
Condensed matter physics,
Physics,
Quantum wells,
Thomas Fermi approximation,
Energy levels,
Silicon,
Impurities
Document request
Note: The document is shipping cost.









Original documents can be consulted at the Departamento de Información y Servicios Documentales, located in the Annex to the General Directorate of Libraries (DGB), circuito de la Investigación Científica across from the Auditorium Nabor Carrillo, located between the Institutes of Physics and Astronomy. Ciudad Universitaria UNAM. Show map
For more information: Departamento de Información y Servicios Documentales, Tels. (5255) 5622-3960, 5622-3964. E-mail: sinfo@dgb.unam.mx . Monday to Friday from (8 to 16 hrs).