Raman scattering from Ge1-xSnx (x ≤ 0.14) alloys



Document title: Raman scattering from Ge1-xSnx (x ≤ 0.14) alloys
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000389004
ISSN: 0035-001X
Authors: 1
1
1
2
Institutions: 1Universidad Autónoma de San Luis Potosí, Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología, San Luis Potosí. México
2Universidad de Guadalajara, Centro Universitario de los Lagos, Lagos de Moreno, Jalisco. México
Year:
Season: Nov-Dic
Volumen: 61
Number: 6
Pages: 437-443
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico, teórico
English abstract Ge1-xSnx alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14 % by high resolution X ray diffraction, and Raman spectroscopy. Contrasting characteristics of the grown layers are observed if the Sn concentration is larger or smaller than 6 % as revealed by X-ray diffraction and Raman spectroscopy
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Raman,
Modelo de correlación espacial
Keyword: Physics and astronomy,
Condensed matter physics,
Raman,
Space correlation model
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