Journal: | Revista mexicana de física |
Database: | PERIÓDICA |
System number: | 000438772 |
ISSN: | 0035-001X |
Authors: | Ortega, J.J1 Escobedo Galván, C.R2 Avelar Muñoz, F1 Ortiz Hernández, A.A3 Tototzintle Huitle, H1 Falcony, C4 Araiza, J.J1 |
Institutions: | 1Universidad Autónoma de Zacatecas, Unidad Académica de Física, Ciudad de México. México 2Instituto Politécnico Nacional, Centro de Estudios Científicos y Tecnológicos, Ciudad de México. México 3Universidad Politécnica de Zacatecas, Departamento de Ingeniería en Mecatrónica, Zacatecas. México 4Instituto Politécnico Nacional, Centro de Investigación y Estudios Avanzados, Ciudad de México. México |
Year: | 2019 |
Season: | Mar-Abr |
Volumen: | 65 |
Number: | 2 |
Country: | México |
Language: | Inglés |
Document type: | Artículo |
Approach: | Analítico, teórico |
English abstract | The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10 - 3 Ω ⋅cm to 10 - 4 Ω ⋅cm, while the carrier concentration showed values over 10 20 cm - 3 with mobility between 10 and 21 cm 2 ⋅V - 1 ⋅s - 1. The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices |
Disciplines: | Física y astronomía |
Keyword: | Física, Oxinitruro de zinc e indio, Oxinitruro amorfo, Elipsometría espectral, Semiconductor amorfo |
Keyword: | Physics, Indium zinc oxynitride, Amorphous oxynitride, Spectral ellipsometry, Amorphous semiconductor |
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