Influence of indium segregation on the light emission of piezoelectric InGaAs/GaAs quantum wells grown by molecular beam epitgaxy
Document title: Influence of indium segregation on the light emission of piezoelectric InGaAs/GaAs quantum wells grown by molecular beam epitgaxy
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000218703
ISSN: 0035-001X
Authors: 1
Institutions: 1Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México
Year:
Season: Abr
Volumen: 50
Number: 2
Pages: 193-199
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física,
Física de materia condensada,
Pozos cuánticos,
Campo piezoeléctrico,
Segregación de Indio,
Epitaxia,
Semiconductores,
Fotoluminiscencia
Keyword: Physics and astronomy,
Condensed matter physics,
Physics,
Quantum wells,
Piezoelectric field,
Indium segregation,
Epitaxy,
Semiconductors,
Photoluminescence
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