Growth and characterization of close-spaced vapor transport GaAs layers, using atomic hydrogen as the initial reactant
Document title: Growth and characterization of close-spaced vapor transport GaAs layers, using atomic hydrogen as the initial reactant
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000173877
ISSN: 0035-001X
Authors: 1
Institutions: 1Benemérita Universidad Autónoma de Puebla, Instituto de Física, Puebla. México
2Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias, Puebla. México
Year:
Season: Oct
Volumen: 43
Number: 5
Pages: 785-794
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física,
Física de materia condensada,
Semiconductores,
Homocapas,
Transporte de vapor,
Espectroscopía,
Fotoluminiscencia
Keyword: Physics and astronomy,
Condensed matter physics,
Physics,
Semiconductors,
Homolayers,
Steam transport,
Spectroscopy,
Photoluminescence
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