Gallium-assisted growth of InSb nanowire



Document title: Gallium-assisted growth of InSb nanowire
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000438930
ISSN: 0035-001X
Authors: 1
1
1
Institutions: 1Wuhan University, School of Physics and Technology, Wuhan, Hubei. China
2Hubei Nuclear Solid Physics Key Laboratory, Wuhan, Hubei. China
Year:
Season: Nov-Dic
Volumen: 65
Number: 6
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico, teórico
English abstract Indium antimony (InSb) nanowires have been synthesized by chemical vapor deposition, and we found that adding gallium as the other evaporation resource can increase the density of nanowires and no doping pollution. For the growth of InSb nanowire, Au film was annealed to form Au nanoparticles as catalysts and explain its catalytic principle. We thought that gallium which coated on the surface of Au nanoparticles assisted nucleation and growth of InSb nanowire in the early stage. The diameter of the InSb nanowires was 60-100 nm and 1-5 μm in length. The grown nanowires have good crystallinity. We found that the surface of InSb was oxidized, and the main oxide was indium oxide. We discovered the tip morphologies of nanowires are different and discussed the causes of this phenomenon in detail
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Deposición de vapor químico,
Nanoalambres,
Antimonio indio,
Nanopartículas de Au,
Oxido,
Morfologías Tip
Keyword: Condensed matter physics,
Chemical vapor deposition,
Nanowires,
Indium antimony,
Au nanoparticles,
Oxide,
Tip morphologies
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