| Journal: | Revista mexicana de física |
| Database: | PERIÓDICA |
| System number: | 000349653 |
| ISSN: | 0035-001X |
| Authors: | Vorobets, M.O1 |
| Institutions: | 1Yuriy Fedkovych Chernivtsi National University, Department of Physics of Semiconductors and Nanostructures, Chernivtsi. Ucrania |
| Year: | 2010 |
| Season: | Dic |
| Volumen: | 56 |
| Number: | 6 |
| Pages: | 441-444 |
| Country: | México |
| Language: | Inglés |
| Document type: | Artículo |
| Approach: | Analítico, teórico |
| Spanish abstract | Se formaron estructuras barreras usando contactos opticas entre dos semiconductores de GaSe y InSe. El efecto de la presion mecanico desde 0 hasta 100 kPa sobre las propiedades electricas de los heterocontactos de GaSe/InSe fue investigado. Los resultados son analizados considerando el modelo de semiconductor – aislador – semiconductor. Utilizando este modelo, explicamos las cararterısticas corriente – voltaje. Se encontro que la modificacion de heterofrontera afectan significativamente el transporte electrico |
| English abstract | Barrier structures were produced using optical contact between the indium and gallium selenides. The effect of mechanical pressure ranging from 0 to 100 kPa on the electrical properties of the GaSe/InSe heterocontacts was investigated. The data was analyzed assuming the SIS (semiconductor – insulator – semiconductor) model. Using this model we were able to explain the current – voltage dependence. It was found that the modification of heteroboundary significantly affects the electric transport |
| Disciplines: | Física y astronomía |
| Keyword: | Física, Semiconductores, Heteroestructuras, Propiedades eléctricas |
| Keyword: | Physics and astronomy, Physics, Semiconductors, Heterostructures, Electrical properties |
| Full text: | Texto completo (Ver PDF) |
