| Journal: | Revista mexicana de física |
| Database: | PERIÓDICA |
| System number: | 000460990 |
| ISSN: | 0035-001X |
| Authors: | Eduardo River, J1 Muñoz Aguirre, N1 Gutiérrez Paredes, G. Juliana1 Tamayo Meza, P.A1 Zapata, Alejandro A1 Martínez Pérez, L2 |
| Institutions: | 1Instituto Politécnico Nacional, Escuela Superior de Ingeniería Mecánica y Eléctrica, Ciudad de México. México 2Instituto Politécnico Nacional, Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Ciudad de México. México 3Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, Ciudad de México. México |
| Year: | 2018 |
| Season: | Nov-Dic |
| Volumen: | 64 |
| Number: | 6 |
| Pages: | 655-661 |
| Country: | México |
| Language: | Inglés |
| Document type: | Artículo |
| Approach: | Analítico, teórico |
| English abstract | By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive P t - I r tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0.58 - 0.64 eV. The ideality factors were in the range of 2.11 - 1.39, respectively. These values are in accordance with those reported by other authors that measured the height of the Pt Schottky barrier on ZnO by means of several methods. The procedure detailed in this work suggests that the scanning time for obtaining I-V Schottky characteristics is of the order of 2 ms |
| Disciplines: | Física y astronomía |
| Keyword: | Física, Altura de la barrera Schottky, AFM conductivo, Características I-V Schottky, Películas delgadas, Propiedades eléctricas |
| Keyword: | Physics, Schottky barrier height, Conductive AFM, I-V Schottky characteristics, Thin films, Electrical properties at nanoscale level |
| Full text: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
