| Journal: | Revista mexicana de física |
| Database: | PERIÓDICA |
| System number: | 000438850 |
| ISSN: | 0035-001X |
| Authors: | Chale Lara, F1 Zapata Torres, M2 Caballero Briones, F1 Cruz, W. de la3 González Cruz, N2 Huerta Escamilla, C3 Farías, M.H3 |
| Institutions: | 1Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Altamira, Tamaulipas. México 2Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Ciudad de México. México 3Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Ensenada, Baja California. México |
| Year: | 2019 |
| Season: | Jul-Ago |
| Volumen: | 65 |
| Number: | 4 |
| Country: | México |
| Language: | Inglés |
| Document type: | Artículo |
| Approach: | Analítico, teórico |
| English abstract | We report the synthesis of AlN hexagonal thin films by pulsed laser ablation, using Al target in nitrogen ambient over natively-oxidized Si (111) at 600°C. Composition and chemical state were determined by X-ray photoelectron spectroscopy, while structural properties were investigated using X-ray diffraction. High-resolution XPS spectra present a gradual shift to higher binding energies on the Al2p peak when nitrogen pressure is incremented, indicating the formation of the AlN compound. At 30 mTorr nitrogen pressure, the Al2p peak corresponds to AlN, located at 73.1 eV, and the XRD pattern shows a hexagonal phase of AlN. The successful formation of the AlN compound is corroborated by UV-Vis reflectivity measurements |
| Disciplines: | Física y astronomía |
| Keyword: | Física, Películas delgadas de AlN, Deposición de láser pulsado, XPS |
| Keyword: | Physics, AlN thin films, Pulsed laser deposition, XPS |
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