| Journal: | Revista mexicana de física |
| Database: | PERIÓDICA |
| System number: | 000368126 |
| ISSN: | 0035-001X |
| Authors: | Figueroa Reséndiz, B.E1 Maya Sánchez, María del Carmen1 Reynoso Hernández, J.A1 |
| Institutions: | 1Centro de Investigación Científica y de Educación Superior de Ensenada, División de Física Aplicada, Ensenada, Baja California. México |
| Year: | 2013 |
| Season: | Nov-Dic |
| Volumen: | 59 |
| Number: | 6 |
| Pages: | 560-569 |
| Country: | México |
| Language: | Inglés |
| Document type: | Artículo |
| Approach: | Analítico, teórico |
| English abstract | This work proposes the use of a common-source cold-FET with gate forward biased to validate the noise figure measurements and the noise parameters of on-wafer transistors. Since a common-source cold-FET behaves as an attenuator, its noise figure and noise parameters can be determined from S-parameters measurements. Three methods for determining the noise parameters of the common-source cold-FET are investigated. The first one uses the noise correlation matrix for passive devices (the S-parameters), the second one is the tuner method and the third one is the F50 method. The noise figure measured and the noise figure computed from S-parameters agree quite well. The noise parameters extracted with the tuner method and the F50 method show good correlation with the noise parameters computed with the S-parameters. These results validate both the noise figure measurements and the noise parameters extraction |
| Disciplines: | Física y astronomía |
| Keyword: | Física, Ruido, Parámetros, Medición |
| Keyword: | Physics and astronomy, Physics, Noise, Parameters, Measurement |
| Full text: | Texto completo (Ver PDF) |
