Transport properties of heavily doped al 0.3 ga 0.7 as semiconducting alloys
Document title: Transport properties of heavily doped al 0.3 ga 0.7 as semiconducting alloys
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000007961
ISSN: 0103-9733
Authors: 1
Institutions: 1Universidade Federal de Minas Gerais, Instituto de Ciencias Exatas, Belo Horizonte, Minas Gerais. Brasil
Year:
Season: Mar
Volumen: 24
Number: 1
Pages: 375-378
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Impurezas,
Centro DX,
Transporte,
Aleaciones,
Efecto Hall,
Semiconductores
Keyword: Physics and astronomy,
Condensed matter physics,
Alloys,
Dx center,
Transport,
Impurities,
Hall effect,
Semiconductors
Document request
Note: The document is shipping cost.









Original documents can be consulted at the Departamento de Información y Servicios Documentales, located in the Annex to the General Directorate of Libraries (DGB), circuito de la Investigación Científica across from the Auditorium Nabor Carrillo, located between the Institutes of Physics and Astronomy. Ciudad Universitaria UNAM. Show map
For more information: Departamento de Información y Servicios Documentales, Tels. (5255) 5622-3960, 5622-3964. E-mail: sinfo@dgb.unam.mx . Monday to Friday from (8 to 16 hrs).