The effects of ion implantation through very thin silicon oxide films
Document title: The effects of ion implantation through very thin silicon oxide films
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000005193
ISSN: 0103-9733
Authors: 1
Institutions: 1Universidade Federal do Rio Grande do Sul, Instituto de Física, Porto Alegre, Rio Grande do Sul. Brasil
Year:
Season: Jun
Volumen: 24
Number: 2
Pages: 529-537
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física atómica y molecular,
Física de materia condensada,
Iones,
Implantación,
Oxido de silicio,
Películas delgadas
Keyword: Physics and astronomy,
Atomic and molecular physics,
Condensed matter physics,
Ions,
Thin films,
Implantation,
Silicon oxide
Document request
Note: The document is shipping cost.









Original documents can be consulted at the Departamento de Información y Servicios Documentales, located in the Annex to the General Directorate of Libraries (DGB), circuito de la Investigación Científica across from the Auditorium Nabor Carrillo, located between the Institutes of Physics and Astronomy. Ciudad Universitaria UNAM. Show map
For more information: Departamento de Información y Servicios Documentales, Tels. (5255) 5622-3960, 5622-3964. E-mail: sinfo@dgb.unam.mx . Monday to Friday from (8 to 16 hrs).