Plasmon-phonon coupling and Raman scattering in Si delta-doped GaAs
Document title: Plasmon-phonon coupling and Raman scattering in Si delta-doped GaAs
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000134601
ISSN: 0103-9733
Authors: 1
Institutions: 1Universidade Federal de Sao Carlos, Departamento de Física, Sao Carlos, Sao Paulo. Brasil
Year:
Season: Dic
Volumen: 27A
Number: 4
Pages: 177-180
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Semiconductores,
Acoplamiento plasmón-fonón,
Dispersión Raman,
Excitaciones colectivas,
Gas de electrones
Keyword: Physics and astronomy,
Condensed matter physics,
Semiconductors,
Plasmon-phonon coupling,
Raman scattering,
Collective excitations,
Electron gas
Document request
Note: The document is shipping cost.









Original documents can be consulted at the Departamento de Información y Servicios Documentales, located in the Annex to the General Directorate of Libraries (DGB), circuito de la Investigación Científica across from the Auditorium Nabor Carrillo, located between the Institutes of Physics and Astronomy. Ciudad Universitaria UNAM. Show map
For more information: Departamento de Información y Servicios Documentales, Tels. (5255) 5622-3960, 5622-3964. E-mail: sinfo@dgb.unam.mx . Monday to Friday from (8 to 16 hrs).