Growth of self-organized InGaAs islands by molecular beam epitaxy
Document title: Growth of self-organized InGaAs islands by molecular beam epitaxy
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000134439
ISSN: 0103-9733
Authors: 1
Institutions: 1Universidade de Sao Paulo, Instituto de Fisica, Sao Paulo. Brasil
2Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin", Campinas, Sao Paulo. Brasil
Year:
Season: Dic
Volumen: 27A
Number: 4
Pages: 154-157
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Semiconductores,
Islas de InGaAs,
Epitaxia,
Puntos cuánticos
Keyword: Physics and astronomy,
Condensed matter physics,
Semiconductors,
InGaAs islands,
Epitaxy,
Quantum dots
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