Electronic structure in narrow-gap quantum dots



Document title: Electronic structure in narrow-gap quantum dots
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000159068
ISSN: 0103-9733
Authors: 1

Institutions: 1Universidade Federal de Sao Carlos, Departamento de Física, Sao Carlos, Sao Paulo. Brasil
2Universidad de La Habana, Departamento de Física Teórica, La Habana. Cuba
Year:
Season: Dic
Volumen: 29
Number: 4
Pages: 730-733
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
English abstract In this work we calculated the electronic structure of spherical quantum dots based on zincblend semiconductor compounds. The strong conduction-valence band coupling in this class of semi-conductors induces a strong mixing of the electronic states which requires a theoretical model to properly take into acount these effects. We have used a full 8 x 8 Kane Hamiltonian in order to include the strong admixture and study the set of symetries associated with these electronic states and their angular momentum in this central force problem. As an application, we have calculated the electronic structure in narrow-gap HgCdTe, InSb and CdTe quantum dots
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Semiconductores,
Puntos cuánticos,
Estructura electrónica,
Atomos artificiales,
Nanoestructuras
Keyword: Physics and astronomy,
Condensed matter physics,
Semiconductors,
Quantum dots,
Electronic structure,
Artificial atoms,
Nanostructures
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