| Journal: | Brazilian journal of physics |
| Database: | PERIÓDICA |
| System number: | 000310488 |
| ISSN: | 0103-9733 |
| Authors: | Mora Ramos, M. E1 Duque, C. A2 |
| Institutions: | 1Universidad Autónoma del Estado de Morelos, Facultad de Ciencias, Cuernavaca, Morelos. México 2Universidad de Antioquia, Instituto de Física, Medellín, Antioquia. Colombia |
| Year: | 2006 |
| Season: | Sep |
| Volumen: | 36 |
| Number: | 3B |
| Pages: | 866-868 |
| Country: | Brasil |
| Language: | Inglés |
| Document type: | Artículo |
| Approach: | Experimental |
| English abstract | The calculation of the electronic energy levels of n-type delta-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10(13) cm-2 |
| Disciplines: | Física y astronomía |
| Keyword: | Física de partículas y campos cuánticos, Arseniato de galio, Dopaje, Presión hidrostática, Pozos cuánticos |
| Keyword: | Physics and astronomy, Particle physics and quantum fields, Gallium arsenide, Doping, Hydrostatic pressure, Quantum wells |
| Full text: | Texto completo (Ver HTML) |
