Electrochemical characterization on semiconductors p-type CVD diamond electrodes



Document title: Electrochemical characterization on semiconductors p-type CVD diamond electrodes
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000159242
ISSN: 0103-9733
Authors: 1



Institutions: 1Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, Sao Paulo. Brasil
2Instituto Tecnologico de Aeronautica, Sao Jose dos Campos, Sao Paulo. Brasil
3Universidade Sao Francisco, Itatiba, Sao Paulo. Brasil
Year:
Season: Dic
Volumen: 29
Number: 4
Pages: 760-763
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
English abstract Semiconductor boron-doped CVD diamond films were prepared on Si substrates by the hot filament technique. The surface morphology analysis by SEM presented continuous and well faceted films. The samples were grown with different boron concentrations by controlling the B/C ratio in the feeding gas. Raman results showed a drastic change of diamond films for different doping levels. The characteristic line at 1332 cm-1decreases and shifts to lower energy as a function of the film resistivity. It was also observed a broad peak around 1220 cm-1 caused by the incorporation of boron in the diamond lattice. Photocurrent-voltage behaviour of undoped and boron-doped diamond electrodes was investigated in dark and UV visible irradiation. The voltammograms showed that doped electrodes illuminated with a xenon lamp exhibited currents significatively higher because of the increased conductivity. For undoped electrodes it was observed a small photocurrent for anodic and cathodic polarization in the order of mA for the potential range of +1.0 V and -1.0 V (Ag/AgCl), for 1.0 M KCl. Mott-Schottky plots studied the interfacial processes at diamond-electrolyte junction. The flatband potential Uf b was found between 0.6 and 0.8 V (Ag/AgCl) which varies with the presence of sp2 -type carbon as an impurity. From the curve slope the acceptor concentrations were found in the range of 1018 and 1021 cm-3 .These values agree with the estimated concentration obtained by Raman measurements
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Semiconductores,
Películas,
Diamante,
Electrodos,
Celdas fotoelectroquímicas
Keyword: Physics and astronomy,
Condensed matter physics,
Semiconductors,
Films,
Diamond,
Electrodes,
Photoelectrochemical cells
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