Effects of high doses of ionizing radiation on interface properties of mos capacitors
Document title: Effects of high doses of ionizing radiation on interface properties of mos capacitors
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000017555
ISSN: 0103-9733
Authors: 1
Institutions: 1Universidade Federal de Pernambuco, Instituto de Física, Recife, Pernambuco. Brasil
Year:
Season: Mar
Volumen: 26
Number: 1
Pages: 401-405
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
MOS,
Interfaz,
Capacitores,
Semiconductores,
Defectos-generacion,
Radiación ionizante
Keyword: Physics and astronomy,
Condensed matter physics,
Mos,
Interface,
Capacitors,
Semiconductors,
Defect generation,
Ionizing radiation
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