Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations
Document title: Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000134839
ISSN: 0103-9733
Authors: 1
Institutions: 1Universidade Federal do Ceara, Departamento de Fisica, Fortaleza, Ceara. Brasil
2Eindhoven University of Technology, COBRA Interuniversity Research Institute, Eindhoven, North Brabant. Holanda
3University of Antwerp, Amberes. Bélgica
Year:
Season: Dic
Volumen: 27A
Number: 4
Pages: 327-331
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Semiconductores,
Centros DX,
Movilidad de electrones,
Simulación,
Monte Carlo
Keyword: Physics and astronomy,
Condensed matter physics,
Semiconductors,
Dx center,
Electron mobility,
Simulation,
Monte Carlo
Document request
Note: The document is shipping cost.









Original documents can be consulted at the Departamento de Información y Servicios Documentales, located in the Annex to the General Directorate of Libraries (DGB), circuito de la Investigación Científica across from the Auditorium Nabor Carrillo, located between the Institutes of Physics and Astronomy. Ciudad Universitaria UNAM. Show map
For more information: Departamento de Información y Servicios Documentales, Tels. (5255) 5622-3960, 5622-3964. E-mail: sinfo@dgb.unam.mx . Monday to Friday from (8 to 16 hrs).