Characterization of pbte epitaxial layers grown on baf2 / caf2 / si structures
Document title: Characterization of pbte epitaxial layers grown on baf2 / caf2 / si structures
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000017556
ISSN: 0103-9733
Authors: 1
Institutions: 1Instituto de Pesquisas Espaciais, Sao Jose dos Campos, Sao Paulo. Brasil
2Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin", Campinas, Sao Paulo. Brasil
Year:
Season: Mar
Volumen: 26
Number: 1
Pages: 406-409
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Capas,
Rayos X,
Silicio,
Epitaxia,
Difracción,
Semiconductores
Keyword: Physics and astronomy,
Condensed matter physics,
X-rays,
Layers,
Silicon,
Epitaxy,
Diffraction,
Semiconductors
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