Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy



Título del documento: Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy
Revista: Materials research
Base de datos: PERIÓDICA
Número de sistema: 000312866
ISSN: 1516-1439
Autores: 1



2
Instituciones: 1Universidade de Sao Paulo, Escola de Engenharia, Sao Carlos, Sao Paulo. Brasil
2Universidade Federal de Mato Grosso do Sul, Departamento de Fisica, Campo Grande, Mato Grosso do Sul. Brasil
Año:
Periodo: Jul-Sep
Volumen: 8
Número: 3
Paginación: 261-268
País: Brasil
Idioma: Inglés
Tipo de documento: Nota breve o noticia
Enfoque: Experimental
Resumen en inglés In this work, (100) oriented monocrystalline silicon samples were single point diamond turned under conditions that led to a ductile and brittle regime. Raman spectroscopy results showed that the ductile regime diamond turning of silicon surfaces induced amorphization and, on the contrary, in the brittle mode machining condition this amorphous layer does not exist. Ductile machined surface was found to be a mixture of crystalline and amorphous phases probed by (macro)-Raman spectroscopy. Transmission Electron Microscopy (TEM) analyses were then carried out in order to characterize the structural alteration in the machined surface and chips. The electron diffraction pattern of the machined surface detected a crystalline phase along with the amorphous silicon confirming the former results. The mechanism of material removal is widely discussed based upon the results presented here
Disciplinas: Ingeniería
Palabras clave: Ingeniería de materiales,
Ingeniería eléctrica,
Diamante,
Silicio monocristalino,
Semiconductores,
Estructuras,
Espectroscopía Raman
Keyword: Engineering,
Electrical engineering,
Materials engineering,
Diamond,
Monocrystalline silicon,
Semiconductors,
Structures,
Raman spectroscopy
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