| Revista: | Materials research |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000312866 |
| ISSN: | 1516-1439 |
| Autores: | Jasinevicius, Renato Goulart1 Porto, Arthur Jose Vieira Pizani, Paulo Sergio Duduch, Jaime Gilberto Santos, Francisco Jose2 |
| Instituciones: | 1Universidade de Sao Paulo, Escola de Engenharia, Sao Carlos, Sao Paulo. Brasil 2Universidade Federal de Mato Grosso do Sul, Departamento de Fisica, Campo Grande, Mato Grosso do Sul. Brasil |
| Año: | 2005 |
| Periodo: | Jul-Sep |
| Volumen: | 8 |
| Número: | 3 |
| Paginación: | 261-268 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Nota breve o noticia |
| Enfoque: | Experimental |
| Resumen en inglés | In this work, (100) oriented monocrystalline silicon samples were single point diamond turned under conditions that led to a ductile and brittle regime. Raman spectroscopy results showed that the ductile regime diamond turning of silicon surfaces induced amorphization and, on the contrary, in the brittle mode machining condition this amorphous layer does not exist. Ductile machined surface was found to be a mixture of crystalline and amorphous phases probed by (macro)-Raman spectroscopy. Transmission Electron Microscopy (TEM) analyses were then carried out in order to characterize the structural alteration in the machined surface and chips. The electron diffraction pattern of the machined surface detected a crystalline phase along with the amorphous silicon confirming the former results. The mechanism of material removal is widely discussed based upon the results presented here |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería de materiales, Ingeniería eléctrica, Diamante, Silicio monocristalino, Semiconductores, Estructuras, Espectroscopía Raman |
| Keyword: | Engineering, Electrical engineering, Materials engineering, Diamond, Monocrystalline silicon, Semiconductors, Structures, Raman spectroscopy |
| Texto completo: | Texto completo (Ver HTML) |
