Revista: | Journal of applied research and technology |
Base de datos: | PERIÓDICA |
Número de sistema: | 000399645 |
ISSN: | 1665-6423 |
Autores: | Vargas Calderón, E1 Sandoval Ibarra, F2 Montoya Suárez, E2 Corona Murguía, O2 |
Instituciones: | 1Intel-Tecnología de México S.A. de C.V., Tlaquepaque, Jalisco. México 2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, Guadalajara, Jalisco. México |
Año: | 2007 |
Periodo: | Abr |
Volumen: | 5 |
Número: | 1 |
Paginación: | 49-56 |
País: | México |
Idioma: | Inglés |
Tipo de documento: | Artículo |
Enfoque: | Aplicado, descriptivo |
Resumen en inglés | Since portable systems and processing power applications demand efficient power consumption, this paper deals with the development of an analytical model based on the on-resistance effect of MOS switches to design a silicon-based char-pump voltage generator (VG). This model that is developed for adding design parameters under the designer's control is a useful design tool to quickly estimate the VG's performance in the time domain. Numerical results are compared with transistor-level simulation to validate not only the analytical model, but also to estimate the integration area of a silicon-based VG. It was found that an on-resistance ranging from zero to 50 Ω presents a relative error of 2%. Experimental results show the usefulness of the proposed design model |
Disciplinas: | Ingeniería |
Palabras clave: | Ingeniería electrónica, Teoría de circuitos, Electrónica de potencia, Diseño de circuitos |
Keyword: | Engineering, Electronic engineering, Circuits theory, Power electronics, Circuit design |
Texto completo: | Texto completo (Ver HTML) |