| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000017540 |
| ISSN: | 0103-9733 |
| Autores: | Henriques, A.B1 Goncalves, L.C.D1 Souza, P.L2 Yavich, B2 |
| Instituciones: | 1Universidade de Sao Paulo, Instituto de Fisica, Sao Paulo. Brasil 2Pontificia Universidade Catolica do Rio de Janeiro, Centro de Estudos em Telecomunicacoes, Rio de Janeiro. Brasil |
| Año: | 1996 |
| Periodo: | Mar |
| Volumen: | 26 |
| Número: | 1 |
| Paginación: | 327-332 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | The Shubnikov{de Haas oscillations of InP with a periodical planar doping with Si were studied at 4.2K in elds of 0{14T. By confronting the oscillation frequencies detected experimentally with the ones predicted on the basis of the e ective mass approximation the carrier population of the superlattice minibands and the characteristic width of the doped layer were obtained. The width of the doped layer obtained in this way is in good agreement with the value obtained from CV pro ling measurements on the same structures |
| Disciplinas: | Física y astronomía, Ingeniería |
| Palabras clave: | Física de materia condensada, Ingeniería de materiales, Capas, Superredes, Semiconductores, Oscilaciones Shubnikov-de Haas |
| Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Materials engineering, Layers, Superlattices, Semiconductors, Shubnikov-de Haas oscillations |
| Texto completo: | Texto completo (Ver PDF) |
